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Make great contributions again! Tongrun Vacuum Box Helps with New Scientific Research Achievements

The Tianjin University research team has successfully released the top issue Nano Micro Letters, breaking the thermodynamic/kinetic limitations of traditional methods!

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1. Successfully prepared a series of layered oxide cathodes (LiNixCoyMnzO2, NCM,x ≥ 0.5), and for the first time, the limit reaction rate close to phase transition was calculated, explaining the mechanism of rapid phase transition in NCM layered oxides.

2. The mechanism of HTS reaction process was studied for the first time, in which the rapid heating rate brought about rapid solid-state reaction kinetics and phase transition occurred rapidly. The precursor rapidly generates lithium containing oxides through intermediate products, and interestingly, the ultrafast average reaction rate is 66.7 (% s-1), taking only 1.5 seconds.


Our company has collaborated with a high-tech company in Shenzhen to develop the experimental equipment "Joule Ultra fast Heating Device"

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    It can achieve millisecond level heating and cooling, and can achieve the effect of heating up to 3000K within 1 second. The test samples can be thin films, blocks, powders, etc. Compared with the commonly used muffle furnace and tube furnace, which have the disadvantages of slow heating and long heating time, it greatly saves valuable research time for researchers and will have different impact effects compared to muffle furnace and tube furnace.

    This device is capable of vacuuming or it is for the use of atmospheric gas, and can also be customized according to requirements. This device can not only be used for preparing materials, but also for testing the thermal shock resistance and other properties of materials under rapid heating conditions. At present, this device is widely used in the ultrafast preparation of materials such as battery materials, energy catalytic materials, graphene, nanomaterials, single atom materials, high entropy alloys and compounds, ceramic materials, etc.






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